RD3P200SNFRATL Pricing (USD) [79619pcs Stock]
- 1 pcs$0.49110
- Part Number:
- RD3P200SNFRATL
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- RD3P200SNFRA IS A POWER MOSFET F.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RD3P200SNFRATL electronic components. RD3P200SNFRATL can be shipped within 24 hours after order. If you have any demands for RD3P200SNFRATL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RD3P200SNFRATL Product Attributes
Part Number :
RD3P200SNFRATL
Manufacturer :
Rohm Semiconductor
Description :
RD3P200SNFRA IS A POWER MOSFET F
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
46 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
20W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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