IXYS - IXFP22N65X2

KEY Part #: K6398027

IXFP22N65X2 Pricing (USD) [24546pcs Stock]

  • 1 pcs$1.84653
  • 10 pcs$1.64822
  • 100 pcs$1.35154
  • 500 pcs$1.03829
  • 1,000 pcs$0.87567

Part Number:
IXFP22N65X2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 650V 22A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - JFETs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in IXYS IXFP22N65X2 electronic components. IXFP22N65X2 can be shipped within 24 hours after order. If you have any demands for IXFP22N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFP22N65X2 Product Attributes

Part Number : IXFP22N65X2
Manufacturer : IXYS
Description : MOSFET N-CH 650V 22A TO-220
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2310pF @ 25V
FET Feature : -
Power Dissipation (Max) : 390W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3

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