IPS80R1K4P7AKMA1 Pricing (USD) [199434pcs Stock]
- 1 pcs$0.48918
- 10 pcs$0.43399
- 100 pcs$0.32455
- 500 pcs$0.25170
- 1,000 pcs$0.19871
- Part Number:
- IPS80R1K4P7AKMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 800V 4A IPAK-SL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF and Diodes - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPS80R1K4P7AKMA1 electronic components. IPS80R1K4P7AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS80R1K4P7AKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS80R1K4P7AKMA1 Product Attributes
Part Number :
IPS80R1K4P7AKMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 800V 4A IPAK-SL
Series :
CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
Super Junction
Power Dissipation (Max) :
32W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO251-3
Package / Case :
TO-251-3 Stub Leads, IPak
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