Infineon Technologies - IRFS52N15DTRLP

KEY Part #: K6399318

IRFS52N15DTRLP Pricing (USD) [73218pcs Stock]

  • 1 pcs$0.53404
  • 800 pcs$0.46215

Part Number:
IRFS52N15DTRLP
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 150V 51A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Power Driver Modules and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRFS52N15DTRLP electronic components. IRFS52N15DTRLP can be shipped within 24 hours after order. If you have any demands for IRFS52N15DTRLP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS52N15DTRLP Product Attributes

Part Number : IRFS52N15DTRLP
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 150V 51A D2PAK
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 32 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 89nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.8W (Ta), 230W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB