Part Number :
EPC2100ENGRT
Description :
GANFET 2 N-CH 30V 9.5A/38A DIE
FET Type :
2 N-Channel (Half Bridge)
FET Feature :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs :
8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id :
2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs :
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
475pF @ 15V, 1960pF @ 15V
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Die