IPC055N03L3X1SA1 Pricing (USD) [187748pcs Stock]
- 1 pcs$0.52681
- Part Number:
- IPC055N03L3X1SA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 1A SAWN ON FOIL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPC055N03L3X1SA1 electronic components. IPC055N03L3X1SA1 can be shipped within 24 hours after order. If you have any demands for IPC055N03L3X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPC055N03L3X1SA1 Product Attributes
Part Number :
IPC055N03L3X1SA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 1A SAWN ON FOIL
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-
Mounting Type :
Surface Mount
Supplier Device Package :
Sawn on foil
Package / Case :
Die
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