Infineon Technologies - IRFH5006TRPBF

KEY Part #: K6419269

IRFH5006TRPBF Pricing (USD) [100682pcs Stock]

  • 1 pcs$0.38836
  • 4,000 pcs$0.37284

Part Number:
IRFH5006TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 100A 8-PQFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Thyristors - SCRs and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IRFH5006TRPBF electronic components. IRFH5006TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH5006TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFH5006TRPBF Product Attributes

Part Number : IRFH5006TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 100A 8-PQFN
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.1 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4175pF @ 30V
FET Feature : -
Power Dissipation (Max) : 3.6W (Ta), 156W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PQFN (5x6)
Package / Case : 8-PowerTDFN