IRFH5006TRPBF Pricing (USD) [100682pcs Stock]
- 1 pcs$0.38836
- 4,000 pcs$0.37284
- Part Number:
- IRFH5006TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 60V 100A 8-PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Thyristors - SCRs and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH5006TRPBF electronic components. IRFH5006TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH5006TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5006TRPBF Product Attributes
Part Number :
IRFH5006TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 100A 8-PQFN
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4175pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
3.6W (Ta), 156W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerTDFN
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