Vishay Siliconix - SIRA32DP-T1-RE3

KEY Part #: K6404906

SIRA32DP-T1-RE3 Pricing (USD) [198134pcs Stock]

  • 1 pcs$0.18668

Part Number:
SIRA32DP-T1-RE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 25V 60A POWERPAKSO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SIRA32DP-T1-RE3 electronic components. SIRA32DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIRA32DP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRA32DP-T1-RE3 Product Attributes

Part Number : SIRA32DP-T1-RE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 25V 60A POWERPAKSO-8
Series : TrenchFET® Gen IV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.2 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 83nC @ 10V
Vgs (Max) : +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds : 4450pF @ 10V
FET Feature : -
Power Dissipation (Max) : 65.7W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8

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