BSM180D12P2C101 Pricing (USD) [224pcs Stock]
- 1 pcs$216.26708
- 10 pcs$208.25769
- Part Number:
- BSM180D12P2C101
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET 2N-CH 1200V 180A MODULE.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor BSM180D12P2C101 electronic components. BSM180D12P2C101 can be shipped within 24 hours after order. If you have any demands for BSM180D12P2C101, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180D12P2C101 Product Attributes
Part Number :
BSM180D12P2C101
Manufacturer :
Rohm Semiconductor
Description :
MOSFET 2N-CH 1200V 180A MODULE
Series :
-
Part Status :
Active
FET Type :
2 N-Channel (Half Bridge)
FET Feature :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C :
204A (Tc)
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 10V
Power - Max :
1130W
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
-
Package / Case :
Module
Supplier Device Package :
Module
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