SSM3K376R,LF Pricing (USD) [1230545pcs Stock]
- 1 pcs$0.03006
- Part Number:
- SSM3K376R,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- SMALL LOW RON NCH MOSFETS ID 4A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3K376R,LF electronic components. SSM3K376R,LF can be shipped within 24 hours after order. If you have any demands for SSM3K376R,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K376R,LF Product Attributes
Part Number :
SSM3K376R,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
SMALL LOW RON NCH MOSFETS ID 4A
Series :
U-MOSVII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
56 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
2.2nC @ 4.5V
Vgs (Max) :
+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
150°C
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23F
Package / Case :
SOT-23-3 Flat Leads
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