BSS83PH6327XTSA1 Pricing (USD) [820866pcs Stock]
- 1 pcs$0.04506
- 3,000 pcs$0.03019
- Part Number:
- BSS83PH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 60V 0.33A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSS83PH6327XTSA1 electronic components. BSS83PH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS83PH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS83PH6327XTSA1 Product Attributes
Part Number :
BSS83PH6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 60V 0.33A SOT23
Series :
SIPMOS®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 330mA, 10V
Vgs(th) (Max) @ Id :
2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs :
3.57nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
78pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
360mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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