SSM3K59CTB,L3F Pricing (USD) [934746pcs Stock]
- 1 pcs$0.04375
- 10,000 pcs$0.04353
- Part Number:
- SSM3K59CTB,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 40V 2A CST3B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3K59CTB,L3F electronic components. SSM3K59CTB,L3F can be shipped within 24 hours after order. If you have any demands for SSM3K59CTB,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K59CTB,L3F Product Attributes
Part Number :
SSM3K59CTB,L3F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 40V 2A CST3B
Series :
U-MOSVII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 8V
Rds On (Max) @ Id, Vgs :
215 mOhm @ 1A, 8V
Vgs(th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
1.1nC @ 4.2V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
130pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
CST3B
Package / Case :
3-SMD, No Lead
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