Diodes Incorporated - DMN53D0LW-13

KEY Part #: K6393356

DMN53D0LW-13 Pricing (USD) [2258971pcs Stock]

  • 1 pcs$0.01637
  • 10,000 pcs$0.01479

Part Number:
DMN53D0LW-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 50V SOT323.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN53D0LW-13 electronic components. DMN53D0LW-13 can be shipped within 24 hours after order. If you have any demands for DMN53D0LW-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN53D0LW-13 Product Attributes

Part Number : DMN53D0LW-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 50V SOT323
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 1.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 45.8pF @ 25V
FET Feature : -
Power Dissipation (Max) : 320mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-323
Package / Case : SC-70, SOT-323