HTMN5130SSD-13 Pricing (USD) [92797pcs Stock]
- 1 pcs$0.42136
- 2,500 pcs$0.37135
- Part Number:
- HTMN5130SSD-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET 2N-CH 55V 2.6A 8SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Diodes Incorporated HTMN5130SSD-13 electronic components. HTMN5130SSD-13 can be shipped within 24 hours after order. If you have any demands for HTMN5130SSD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTMN5130SSD-13 Product Attributes
Part Number :
HTMN5130SSD-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET 2N-CH 55V 2.6A 8SOIC
Series :
-
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
2.6A
Rds On (Max) @ Id, Vgs :
130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
218.7pF @ 25V
Power - Max :
1.7W
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO
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