ON Semiconductor - NTMFS6B03NT1G

KEY Part #: K6400639

NTMFS6B03NT1G Pricing (USD) [24328pcs Stock]

  • 1 pcs$1.70245
  • 1,500 pcs$1.69398

Part Number:
NTMFS6B03NT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 100V 19A SO8FL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Diodes - Zener - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor NTMFS6B03NT1G electronic components. NTMFS6B03NT1G can be shipped within 24 hours after order. If you have any demands for NTMFS6B03NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS6B03NT1G Product Attributes

Part Number : NTMFS6B03NT1G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 100V 19A SO8FL
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 19A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 50V
FET Feature : -
Power Dissipation (Max) : 3.4W (Ta), 165W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN