Toshiba Semiconductor and Storage - SSM3J36MFV,L3F

KEY Part #: K6403830

[2222pcs Stock]


    Part Number:
    SSM3J36MFV,L3F
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET P-CH 20V 0.33A VESM.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Diodes - RF, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers and Diodes - Rectifiers - Arrays ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage SSM3J36MFV,L3F electronic components. SSM3J36MFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3J36MFV,L3F, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SSM3J36MFV,L3F Product Attributes

    Part Number : SSM3J36MFV,L3F
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET P-CH 20V 0.33A VESM
    Series : U-MOSIII
    Part Status : Discontinued at Digi-Key
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 330mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 1.31 Ohm @ 100mA, 4.5V
    Vgs(th) (Max) @ Id : -
    Gate Charge (Qg) (Max) @ Vgs : 1.2nC @ 4V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : 43pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 150mW (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : VESM
    Package / Case : SOT-723

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