Vishay Siliconix - SQS411ENW-T1_GE3

KEY Part #: K6420773

SQS411ENW-T1_GE3 Pricing (USD) [250794pcs Stock]

  • 1 pcs$0.14748

Part Number:
SQS411ENW-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 40V PPAK 1212-8W.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SQS411ENW-T1_GE3 electronic components. SQS411ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS411ENW-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQS411ENW-T1_GE3 Product Attributes

Part Number : SQS411ENW-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 40V PPAK 1212-8W
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 27.3 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3191pF @ 25V
FET Feature : -
Power Dissipation (Max) : 53.6W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8W
Package / Case : PowerPAK® 1212-8W

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