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  5. FQPF19N20CYDTU

ON Semiconductor - FQPF19N20CYDTU

KEY Part #: K6406318

[8654pcs Stock]

    Part Number:
    FQPF19N20CYDTU
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 200V 19A TO-220F.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs and Transistors - Special Purpose ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQPF19N20CYDTU electronic components. FQPF19N20CYDTU can be shipped within 24 hours after order. If you have any demands for FQPF19N20CYDTU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQPF19N20CYDTU Product Attributes

    Part Number : FQPF19N20CYDTU
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 200V 19A TO-220F
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 170 mOhm @ 9.5A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 1080pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 43W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220F-3 (Y-Forming)
    Package / Case : TO-220-3 Full Pack, Formed Leads

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