Vishay Siliconix - IRFIBE20GPBF

KEY Part #: K6398927

IRFIBE20GPBF Pricing (USD) [28864pcs Stock]

  • 1 pcs$1.42787
  • 10 pcs$1.29081
  • 100 pcs$0.98408
  • 500 pcs$0.76541
  • 1,000 pcs$0.63419

Part Number:
IRFIBE20GPBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 800V 1.4A TO220FP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Diodes - RF, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFIBE20GPBF electronic components. IRFIBE20GPBF can be shipped within 24 hours after order. If you have any demands for IRFIBE20GPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFIBE20GPBF Product Attributes

Part Number : IRFIBE20GPBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 800V 1.4A TO220FP
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.5 Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 530pF @ 25V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3 Full Pack, Isolated Tab

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