IXFT36N50P Pricing (USD) [12145pcs Stock]
- 1 pcs$3.90460
- 10 pcs$3.51238
- 100 pcs$2.88777
- 500 pcs$2.41949
- 1,000 pcs$2.10730
- Part Number:
- IXFT36N50P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 500V 36A TO-268 D3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXFT36N50P electronic components. IXFT36N50P can be shipped within 24 hours after order. If you have any demands for IXFT36N50P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT36N50P Product Attributes
Part Number :
IXFT36N50P
Manufacturer :
IXYS
Description :
MOSFET N-CH 500V 36A TO-268 D3
Series :
HiPerFET™, PolarP2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
540W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268
Package / Case :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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