Infineon Technologies - IPN50R650CEATMA1

KEY Part #: K6420947

IPN50R650CEATMA1 Pricing (USD) [301457pcs Stock]

  • 1 pcs$0.12270
  • 3,000 pcs$0.10062

Part Number:
IPN50R650CEATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CHANNEL 500V 9A SOT223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN50R650CEATMA1 Product Attributes

Part Number : IPN50R650CEATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CHANNEL 500V 9A SOT223
Series : CoolMOS™ CE
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 13V
Rds On (Max) @ Id, Vgs : 650 mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id : 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 342pF @ 100V
FET Feature : -
Power Dissipation (Max) : 5W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-SOT223
Package / Case : SOT-223-3

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