[856pcs Stock]
- Part Number:
- TK60D08J1(Q)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 75V 60A TO220W.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Bridge Rectifiers, Diodes - Zener - Single, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK60D08J1(Q) electronic components. TK60D08J1(Q) can be shipped within 24 hours after order. If you have any demands for TK60D08J1(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK60D08J1(Q) Product Attributes
Part Number :
TK60D08J1(Q)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 75V 60A TO220W
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5450pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
140W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220(W)
Package / Case :
TO-220-3
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