Rohm Semiconductor - R6030ENX

KEY Part #: K6398463

R6030ENX Pricing (USD) [18158pcs Stock]

  • 1 pcs$2.49877
  • 10 pcs$2.22994
  • 100 pcs$1.82855
  • 500 pcs$1.48068
  • 1,000 pcs$1.24877

Part Number:
R6030ENX
Manufacturer:
Rohm Semiconductor
Detailed description:
MOSFET N-CH 600V 30A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays and Power Driver Modules ...
Competitive Advantage:
We specialize in Rohm Semiconductor R6030ENX electronic components. R6030ENX can be shipped within 24 hours after order. If you have any demands for R6030ENX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

R6030ENX Product Attributes

Part Number : R6030ENX
Manufacturer : Rohm Semiconductor
Description : MOSFET N-CH 600V 30A TO220
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2100pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FM
Package / Case : TO-220-3 Full Pack

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