APTM120DA30CT1G Pricing (USD) [2233pcs Stock]
- 100 pcs$25.45625
- Part Number:
- APTM120DA30CT1G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 1200V 31A SP1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APTM120DA30CT1G electronic components. APTM120DA30CT1G can be shipped within 24 hours after order. If you have any demands for APTM120DA30CT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM120DA30CT1G Product Attributes
Part Number :
APTM120DA30CT1G
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1200V 31A SP1
Series :
POWER MOS 8™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
560nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
14560pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
657W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SP1
Package / Case :
SP1
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