TK60P03M1,RQ(S Pricing (USD) [214793pcs Stock]
- 1 pcs$0.19037
- 2,000 pcs$0.18942
- Part Number:
- TK60P03M1,RQ(S
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 30V 60A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK60P03M1,RQ(S electronic components. TK60P03M1,RQ(S can be shipped within 24 hours after order. If you have any demands for TK60P03M1,RQ(S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK60P03M1,RQ(S Product Attributes
Part Number :
TK60P03M1,RQ(S
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 60A DPAK-3
Series :
U-MOSVI-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
63W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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