DMN61D9U-13 Pricing (USD) [1539193pcs Stock]
- 1 pcs$0.02403
- 10,000 pcs$0.02158
- Part Number:
- DMN61D9U-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 60V 0.38A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN61D9U-13 electronic components. DMN61D9U-13 can be shipped within 24 hours after order. If you have any demands for DMN61D9U-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D9U-13 Product Attributes
Part Number :
DMN61D9U-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 60V 0.38A SOT23
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 5V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.4nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
28.5pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
370mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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