IRF9Z10PBF Pricing (USD) [50279pcs Stock]
- 1 pcs$0.75676
- 10 pcs$0.66854
- 100 pcs$0.52848
- 500 pcs$0.40983
- 1,000 pcs$0.30606
- Part Number:
- IRF9Z10PBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 60V 6.7A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Programmable Unijunction, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRF9Z10PBF electronic components. IRF9Z10PBF can be shipped within 24 hours after order. If you have any demands for IRF9Z10PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z10PBF Product Attributes
Part Number :
IRF9Z10PBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 60V 6.7A TO220AB
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
500 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
43W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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