GA10SICP12-263 Pricing (USD) [3349pcs Stock]
- 1 pcs$19.21305
- 10 pcs$17.77033
- 25 pcs$16.32929
- 100 pcs$15.17669
- Part Number:
- GA10SICP12-263
- Manufacturer:
- GeneSiC Semiconductor
- Detailed description:
- TRANS SJT 1200V 25A TO263-7.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in GeneSiC Semiconductor GA10SICP12-263 electronic components. GA10SICP12-263 can be shipped within 24 hours after order. If you have any demands for GA10SICP12-263, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA10SICP12-263 Product Attributes
Part Number :
GA10SICP12-263
Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 1200V 25A TO263-7
Series :
-
Part Status :
Active
FET Type :
-
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
100 mOhm @ 10A
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
1403pF @ 800V
FET Feature :
-
Power Dissipation (Max) :
170W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK (7-Lead)
Package / Case :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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