DMG7401SFGQ-7 Pricing (USD) [2953pcs Stock]
- 2,000 pcs$0.09462
- Part Number:
- DMG7401SFGQ-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET P-CH 30V 9.8A PWRDI3333-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Thyristors - TRIACs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG7401SFGQ-7 electronic components. DMG7401SFGQ-7 can be shipped within 24 hours after order. If you have any demands for DMG7401SFGQ-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG7401SFGQ-7 Product Attributes
Part Number :
DMG7401SFGQ-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET P-CH 30V 9.8A PWRDI3333-8
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 20V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 12A, 20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2987pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
940mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerWDFN
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