Diodes Incorporated - DMG7401SFGQ-7

KEY Part #: K6401717

DMG7401SFGQ-7 Pricing (USD) [2953pcs Stock]

  • 2,000 pcs$0.09462

Part Number:
DMG7401SFGQ-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET P-CH 30V 9.8A PWRDI3333-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Diodes Incorporated DMG7401SFGQ-7 electronic components. DMG7401SFGQ-7 can be shipped within 24 hours after order. If you have any demands for DMG7401SFGQ-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG7401SFGQ-7 Product Attributes

Part Number : DMG7401SFGQ-7
Manufacturer : Diodes Incorporated
Description : MOSFET P-CH 30V 9.8A PWRDI3333-8
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 20V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 12A, 20V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 2987pF @ 15V
FET Feature : -
Power Dissipation (Max) : 940mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI3333-8
Package / Case : 8-PowerWDFN

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