[12718pcs Stock]
- Part Number:
- IRF7526D1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 30V 2A MICRO8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF7526D1 electronic components. IRF7526D1 can be shipped within 24 hours after order. If you have any demands for IRF7526D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7526D1 Product Attributes
Part Number :
IRF7526D1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 30V 2A MICRO8
Series :
FETKY™
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
200 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
1.25W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Micro8™
Package / Case :
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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