STI175N4F6AG Pricing (USD) [90331pcs Stock]
- 1 pcs$0.43286
- 1,000 pcs$0.38678
- Part Number:
- STI175N4F6AG
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 40V 120A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STI175N4F6AG electronic components. STI175N4F6AG can be shipped within 24 hours after order. If you have any demands for STI175N4F6AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI175N4F6AG Product Attributes
Part Number :
STI175N4F6AG
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 40V 120A I2PAK
Series :
STripFET™ F6
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.7 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7735pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
190W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK (TO-262)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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