Toshiba Semiconductor and Storage - TK20V60W,LVQ

KEY Part #: K6417591

TK20V60W,LVQ Pricing (USD) [35437pcs Stock]

  • 1 pcs$1.22142
  • 2,500 pcs$1.21534

Part Number:
TK20V60W,LVQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N CH 600V 20A 5DFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - JFETs and Diodes - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK20V60W,LVQ electronic components. TK20V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK20V60W,LVQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK20V60W,LVQ Product Attributes

Part Number : TK20V60W,LVQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 20A 5DFN
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 170 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 300V
FET Feature : Super Junction
Power Dissipation (Max) : 156W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 4-DFN-EP (8x8)
Package / Case : 4-VSFN Exposed Pad

You May Also Be Interested In