NDD60N550U1T4G Pricing (USD) [2695pcs Stock]
- 2,500 pcs$0.29680
- Part Number:
- NDD60N550U1T4G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 8.2A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Diodes - Zener - Single, Transistors - JFETs, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor NDD60N550U1T4G electronic components. NDD60N550U1T4G can be shipped within 24 hours after order. If you have any demands for NDD60N550U1T4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NDD60N550U1T4G Product Attributes
Part Number :
NDD60N550U1T4G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 8.2A DPAK-3
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
550 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
94W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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