ON Semiconductor - NTMFS5H610NLT1G

KEY Part #: K6397342

NTMFS5H610NLT1G Pricing (USD) [138242pcs Stock]

  • 1 pcs$0.26756

Part Number:
NTMFS5H610NLT1G
Manufacturer:
ON Semiconductor
Detailed description:
T8 60V LOW COSS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Thyristors - SCRs and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in ON Semiconductor NTMFS5H610NLT1G electronic components. NTMFS5H610NLT1G can be shipped within 24 hours after order. If you have any demands for NTMFS5H610NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS5H610NLT1G Product Attributes

Part Number : NTMFS5H610NLT1G
Manufacturer : ON Semiconductor
Description : T8 60V LOW COSS
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs : 13.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 880pF @ 30V
FET Feature : -
Power Dissipation (Max) : 3W (Ta), 43W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN, 5 Leads