IXFX32N100P Pricing (USD) [5461pcs Stock]
- 1 pcs$9.11774
- 10 pcs$8.29029
- 100 pcs$6.70300
- Part Number:
- IXFX32N100P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 32A PLUS247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF and Power Driver Modules ...
- Competitive Advantage:
- We specialize in IXYS IXFX32N100P electronic components. IXFX32N100P can be shipped within 24 hours after order. If you have any demands for IXFX32N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX32N100P Product Attributes
Part Number :
IXFX32N100P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 32A PLUS247
Series :
HiPerFET™, PolarP2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
320 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
225nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
14200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
960W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS247™-3
Package / Case :
TO-247-3
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