T2N7002BK,LM Pricing (USD) [3334097pcs Stock]
- 1 pcs$0.01227
- 3,000 pcs$0.01221
- Part Number:
- T2N7002BK,LM
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 60V 0.4A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage T2N7002BK,LM electronic components. T2N7002BK,LM can be shipped within 24 hours after order. If you have any demands for T2N7002BK,LM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
T2N7002BK,LM Product Attributes
Part Number :
T2N7002BK,LM
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 60V 0.4A SOT23
Series :
U-MOSVII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.6nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
40pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
320mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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