Vishay Siliconix - SI7186DP-T1-GE3

KEY Part #: K6407831

[837pcs Stock]


    Part Number:
    SI7186DP-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 80V 32A PPAK SO-8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Transistors - Special Purpose ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI7186DP-T1-GE3 electronic components. SI7186DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7186DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI7186DP-T1-GE3 Product Attributes

    Part Number : SI7186DP-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 80V 32A PPAK SO-8
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 80V
    Current - Continuous Drain (Id) @ 25°C : 32A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 12.5 mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id : 4.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 2840pF @ 40V
    FET Feature : -
    Power Dissipation (Max) : 5.2W (Ta), 64W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PowerPAK® SO-8
    Package / Case : PowerPAK® SO-8

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