PSMN1R6-30MLHX Pricing (USD) [177123pcs Stock]
- 1 pcs$0.20882
- Part Number:
- PSMN1R6-30MLHX
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- PSMN1R6-30MLH/SOT1210/MLFPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN1R6-30MLHX electronic components. PSMN1R6-30MLHX can be shipped within 24 hours after order. If you have any demands for PSMN1R6-30MLHX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN1R6-30MLHX Product Attributes
Part Number :
PSMN1R6-30MLHX
Manufacturer :
Nexperia USA Inc.
Description :
PSMN1R6-30MLH/SOT1210/MLFPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2.369nF @ 15V
FET Feature :
-
Power Dissipation (Max) :
106W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
LFPAK33
Package / Case :
SOT-1210, 8-LFPAK33
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