Vishay Siliconix - SIA921EDJ-T1-GE3

KEY Part #: K6524824

SIA921EDJ-T1-GE3 Pricing (USD) [344842pcs Stock]

  • 1 pcs$0.10726
  • 3,000 pcs$0.10093

Part Number:
SIA921EDJ-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2P-CH 20V 4.5A SC70-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SIA921EDJ-T1-GE3 electronic components. SIA921EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA921EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA921EDJ-T1-GE3 Product Attributes

Part Number : SIA921EDJ-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2P-CH 20V 4.5A SC70-6
Series : TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.5A
Rds On (Max) @ Id, Vgs : 59 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 7.8W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SC-70-6 Dual
Supplier Device Package : PowerPAK® SC-70-6 Dual

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