IXTN22N100L Pricing (USD) [2223pcs Stock]
- 1 pcs$20.44543
- 10 pcs$19.12085
- 25 pcs$17.68398
- 100 pcs$16.57873
- 250 pcs$15.47348
- Part Number:
- IXTN22N100L
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 22A SOT-227.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in IXYS IXTN22N100L electronic components. IXTN22N100L can be shipped within 24 hours after order. If you have any demands for IXTN22N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN22N100L Product Attributes
Part Number :
IXTN22N100L
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 22A SOT-227
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 11A, 20V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 15V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
7050pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
700W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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