Diodes Incorporated - DMT6016LFDF-7

KEY Part #: K6418216

DMT6016LFDF-7 Pricing (USD) [377634pcs Stock]

  • 1 pcs$0.09795
  • 3,000 pcs$0.08766

Part Number:
DMT6016LFDF-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 60V 8.9A 6UDFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - RF, Thyristors - SCRs, Transistors - Programmable Unijunction, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors) and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Diodes Incorporated DMT6016LFDF-7 electronic components. DMT6016LFDF-7 can be shipped within 24 hours after order. If you have any demands for DMT6016LFDF-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT6016LFDF-7 Product Attributes

Part Number : DMT6016LFDF-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 60V 8.9A 6UDFN
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 864pF @ 30V
FET Feature : -
Power Dissipation (Max) : 820mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-UDFN (2x2)
Package / Case : 6-UDFN Exposed Pad