ON Semiconductor - NVMFS6B03NWFT3G

KEY Part #: K6402193

NVMFS6B03NWFT3G Pricing (USD) [2788pcs Stock]

  • 5,000 pcs$1.60785

Part Number:
NVMFS6B03NWFT3G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 100V 132A SO8FL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - RF ...
Competitive Advantage:
We specialize in ON Semiconductor NVMFS6B03NWFT3G electronic components. NVMFS6B03NWFT3G can be shipped within 24 hours after order. If you have any demands for NVMFS6B03NWFT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS6B03NWFT3G Product Attributes

Part Number : NVMFS6B03NWFT3G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 100V 132A SO8FL
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 50V
FET Feature : -
Power Dissipation (Max) : 3.9W (Ta), 198W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN

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