RS1E180BNTB Pricing (USD) [478859pcs Stock]
- 1 pcs$0.08539
- 2,500 pcs$0.08497
- Part Number:
- RS1E180BNTB
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CHANNEL 30V 60A 8-HSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RS1E180BNTB electronic components. RS1E180BNTB can be shipped within 24 hours after order. If you have any demands for RS1E180BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1E180BNTB Product Attributes
Part Number :
RS1E180BNTB
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CHANNEL 30V 60A 8-HSOP
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.9 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
3W (Ta), 25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-HSOP
Package / Case :
8-PowerTDFN
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