APT7M120B Pricing (USD) [13572pcs Stock]
- 1 pcs$3.33610
- 10 pcs$3.00381
- 100 pcs$2.46986
- 500 pcs$2.06934
- 1,000 pcs$1.80233
- Part Number:
- APT7M120B
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 1200V 8A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT7M120B electronic components. APT7M120B can be shipped within 24 hours after order. If you have any demands for APT7M120B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT7M120B Product Attributes
Part Number :
APT7M120B
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1200V 8A TO247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2565pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
335W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 [B]
Package / Case :
TO-247-3
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