IXFH34N65X2 Pricing (USD) [14657pcs Stock]
- 1 pcs$3.09371
- 10 pcs$2.76319
- 100 pcs$2.26581
- 500 pcs$1.83476
- 1,000 pcs$1.54739
- Part Number:
- IXFH34N65X2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 650V 34A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - Programmable Unijunction, Diodes - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in IXYS IXFH34N65X2 electronic components. IXFH34N65X2 can be shipped within 24 hours after order. If you have any demands for IXFH34N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH34N65X2 Product Attributes
Part Number :
IXFH34N65X2
Manufacturer :
IXYS
Description :
MOSFET N-CH 650V 34A TO-247
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
105 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3330pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
540W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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