[51pcs Stock]
- Part Number:
- IXTP1R6N50P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 500V 1.6A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Programmable Unijunction, Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTP1R6N50P electronic components. IXTP1R6N50P can be shipped within 24 hours after order. If you have any demands for IXTP1R6N50P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP1R6N50P Product Attributes
Part Number :
IXTP1R6N50P
Manufacturer :
IXYS
Description :
MOSFET N-CH 500V 1.6A TO-220
Series :
PolarHV™
Part Status :
Discontinued at Digi-Key
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
3.9nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
43W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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