Vishay Semiconductor Diodes Division - RGF1JHE3/5CA

KEY Part #: K6457445

RGF1JHE3/5CA Pricing (USD) [506068pcs Stock]

  • 1 pcs$0.07309
  • 6,500 pcs$0.06624

Part Number:
RGF1JHE3/5CA
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division RGF1JHE3/5CA electronic components. RGF1JHE3/5CA can be shipped within 24 hours after order. If you have any demands for RGF1JHE3/5CA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGF1JHE3/5CA Product Attributes

Part Number : RGF1JHE3/5CA
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 1A DO214BA
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 250ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 8.5pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214BA
Supplier Device Package : DO-214BA (GF1)
Operating Temperature - Junction : -65°C ~ 175°C

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