STMicroelectronics - STW45N60DM2AG

KEY Part #: K6396742

STW45N60DM2AG Pricing (USD) [14589pcs Stock]

  • 1 pcs$2.82489
  • 10 pcs$2.52080
  • 100 pcs$2.06706
  • 500 pcs$1.67381
  • 1,000 pcs$1.41165

Part Number:
STW45N60DM2AG
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 600V 34A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Rectifiers - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STW45N60DM2AG Product Attributes

Part Number : STW45N60DM2AG
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 600V 34A
Series : Automotive, AEC-Q101, MDmesh™ DM2
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 93 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 2500pF @ 100V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247
Package / Case : TO-247-3

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