Toshiba Semiconductor and Storage - TK15A60U(STA4,Q,M)

KEY Part #: K6408156

TK15A60U(STA4,Q,M) Pricing (USD) [725pcs Stock]

  • 1 pcs$1.67025

Part Number:
TK15A60U(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 600V 15A TO-220SIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Thyristors - TRIACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK15A60U(STA4,Q,M) electronic components. TK15A60U(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK15A60U(STA4,Q,M), Please submit a Request for Quotation here or send us an email:
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TK15A60U(STA4,Q,M) Product Attributes

Part Number : TK15A60U(STA4,Q,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 15A TO-220SIS
Series : DTMOSII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 10V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack

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