Infineon Technologies - IPP052N06L3GHKSA1

KEY Part #: K6402305

[2750pcs Stock]


    Part Number:
    IPP052N06L3GHKSA1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 60V 80A TO220-3.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - JFETs, Thyristors - SCRs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
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    We specialize in Infineon Technologies IPP052N06L3GHKSA1 electronic components. IPP052N06L3GHKSA1 can be shipped within 24 hours after order. If you have any demands for IPP052N06L3GHKSA1, Please submit a Request for Quotation here or send us an email:
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    IPP052N06L3GHKSA1 Product Attributes

    Part Number : IPP052N06L3GHKSA1
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 60V 80A TO220-3
    Series : OptiMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 5 mOhm @ 80A, 10V
    Vgs(th) (Max) @ Id : 2.2V @ 58µA
    Gate Charge (Qg) (Max) @ Vgs : 50nC @ 4.5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 8400pF @ 30V
    FET Feature : -
    Power Dissipation (Max) : 115W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : PG-TO220-3
    Package / Case : TO-220-3